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IRF9130
Data Sheet February 1999 File Number
2220.3
-12A, -100V, 0.30 Ohm, P-Channel Power MOSFET
These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17511.
Features
* -12A, -100V * rDS(ON) = 0.30 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance
Symbol
D
Ordering Information
PART NUMBER IRF9130 PACKAGE TO-204AA BRAND IRF9130
G
S
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AA
DRAIN (FLANGE)
SOURCE (PIN 2) GATE (PIN 1)
5-8
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
IRF9130
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified IRF9130 -100 -100 -12 -7.5 -48 20 75 0.6 500 -55 to 150 300 UNITS V V A A A V W W/oC mJ oC
oC
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to TJ = 125oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Measured From the Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances
D LD G LS S
TEST CONDITIONS ID = -250A, VGS = 0V, (Figure 10) VGS = VDS, ID = -250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC VDS > ID(ON) x rDS(ON)MAX, VGS = -10V VGS = 20V ID = -6.5A, VGS = -10V, (Figures 8, 9) VDS > ID(ON) x rDS(ON)MAX, ID = -6.5A (Figure 12) VDD = 0.5 x Rated BVDSS, ID -6.5A, RG = 50 RL = 5.7 (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = -10V, ID = -15A, VDS = 0.8 x Rated BVDSS Ig(REF) = -1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature VDS = -25V, VGS = 0V, f = 1MHz (Figure 11)
MIN -100 -2 -12 2 -
TYP 0.25 3.7 30 70 70 70 25 13 12 500 300 100 5.0
MAX -4 -25 250 100 0.30 60 140 140 140 45 -
UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH
Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance
Internal Source Inductance
LS
-
12.5
-
nH
Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
RJC RJA Typical Socket Mount
-
-
1.67 30
oC/W oC/W
5-9
IRF9130
Source to Drain Diode Specifications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode
G D
MIN -
TYP -
MAX -12 -48
UNITS A A
S
Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES:
VSD trr QRR
TC = 25oC, ISD = -12A, VGS = 0V (Figure 13) TJ =150oC, ISD = -12A, dISD/dt = 100A/s TJ = 150oC, ISD = -12A, dISD/dt = 100A/s
-
300 1.8
-1.5 -
V ns C
2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, starting TJ = 25oC, L = 5.2mH, RG = 25, peak IAS = 12A. See Figures 15, 16.
Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8
Unless Otherwise Specified
-12.0
ID, DRAIN CURRENT (A)
-9.6
-7.2
0.6 0.4
-4.8
0.2 0 0 25 50 75 100 TA , CASE TEMPERATURE (oC) 125 150
-2.4
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
ZJC, NORMALIZED TRANSIENT
THERMAL IMPEDANCE (oC/W)
1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE PDM
0.01 10-5
NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-4 10-3 10-2 10-1 1 10
t1 t2
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
5-10
IRF9130 Typical Performance Curves
100
Unless Otherwise Specified (Continued)
-20 VGS = -10V VGS = -9V PULSE DURATION = 80s VGS = -8V -12 VGS = -7V
ID, DRAIN CURRENT (A)
10 1ms OPERATION IN THIS AREA IS LIMITED BY rDS(ON) 1 TC = 25oC TJ = MAX RATED SINGLE PULSE 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 10ms 100ms DC
ID, DRAIN CURRENT (A)
10s 100s
-16
-8
VGS = -6V
-4
VGS = -5V VGS = -4V
0
0
-10
-20
-30
-40
-50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
-10 VGS = -8V VGS = -9V -6 VGS = -10V VGS = -6V VGS = -7V ID(ON), ON-STATE DRAIN CURRENT (A) PULSE DURATION = 80s -8
-20 PULSE DURATION = 80s VDS I D(ON) x rDS(ON)MAX -16 TJ = 125oC -12 TJ = 25oC TJ = -55oC
ID, DRAIN CURRENT (A)
-4 VGS = -5V -2 VGS = -4V 0 0 -1 -2 -3 -4 -5 VDS, DRAIN TO SOURCE VOLTAGE (V)
-8
-4
0 0 -2 -4 -6 -8 VGS, GATE TO SOURCE VOLTAGE (V) -10
FIGURE 6. SATURATION CHARACTERISTICS
1.0 PULSE DURATION = 2s 0.8 ON RESISTANCE () NORMALIZED DRAIN TO SOURCE ON RESISTANCE VGS = -10V rDS(ON), DRAIN TO SOURCE 2.2
FIGURE 7. TRANSFER CHARACTERISTICS
VGS = -10V, ID = -4A 1.8
0.6
1.4
0.4 VGS = - 20V 0.2
1.0
0.6
0 0 -10 -30 -20 ID, DRAIN CURRENT (A) -40 -50
0.2
-40
0
40
80
120
TJ , JUNCTION TEMPERATURE (oC)
NOTE: Heating effect of 2s pulse is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
5-11
IRF9130 Typical Performance Curves
1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE
Unless Otherwise Specified (Continued)
1000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD CISS
1.15 C, CAPACITANCE (pF)
800
1.05
600
0.95
400
COSS
0.85
200 CRSS
0.75 -40
0 0 40 80 120 160 0 TJ , JUNCTION TEMPERATURE (oC)
-10
-20
-30
-40
-50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5 gfs, TRANSCONDUCTANCE (S) TJ = 25oC ISD, SOURCE TO DRAIN CURRENT (A) TJ = -55oC 4 TJ = 125oC 3 PULSE DURATION = 80s 2
-100
-10
TJ = 150oC
-1.0
TJ = 25oC
1
0
-4
-8
-12
-16
-20
-0.1 -0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
I D , DRAIN CURRENT (A)
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0 VGS, GATE TO SOURCE VOLTAGE (V) ID = 15A
-5 VDS = -80V
-10
VDS = -50V VDS = -20V
-15 0 8 16 24 32 40 Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5-12
IRF9130 Test Circuits and Waveforms
VDS tAV L VARY tP TO OBTAIN REQUIRED PEAK IAS RG 0
+
VDD VDD
0V VGS
DUT tP IAS 0.01
IAS tP BVDSS VDS
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON td(ON) tr RL 0 10%
tOFF td(OFF) tf 10%
DUT VGS RG
VDD
+
VDS VGS 0
90%
90%
10% 50% PULSE WIDTH 90% 50%
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
-VDS (ISOLATED SUPPLY) 0 DUT VDS
12V BATTERY
0.2F
50k 0.3F Qgs D G DUT VDD Qgd Qg(TOT) VGS
0 Ig(REF) IG CURRENT SAMPLING RESISTOR S +VDS ID CURRENT SAMPLING RESISTOR 0
IG(REF)
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
5-13
IRF9130
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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